• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of fabricating a MEMS structure having a fixed portion fixed to a substrate and a floating portion floating on the substrate is disclosed. The sacrificial layer stacked on the substrate is patterned to form a groove-shaped space surrounding an area corresponding to the area where the fixing part is to be formed. When the MEMS structure layer is stacked on the patterned sacrificial layer, sidewalls are formed in the space, and fixing parts and floating parts are formed on the sacrificial layer. When the sacrificial layer is removed using an etchant, the sacrificial layer under the fixing part is protected from the etchant by the sidewalls, thereby removing the remaining portions of the sacrificial layer except for the portion surrounded by the sidewalls. Thus, only the sacrificial layer below the flotation is removed. Since the connection part is made of the same thickness as the fixing part and the floating part, a MEMS structure having a rigid structure is provided. In addition, the boundary between the fixed part and the floating part can be set clearly, and the adjustment of the length of the floating part can be precisely controlled.
    公开号:KR20030049992A
    申请号:KR1020010080358
    申请日:2001-12-18
    公开日:2003-06-25
    发明作者:이은성；이문철；김현옥
    申请人:삼성전자주식회사；
    IPC主号:
    专利说明:

    MEMS structure having blocked sacrificial layer support and its fabrication method {MEMS structure having a blocked-sacrificial layer support / anchor and a fabrication method of the same}
    [12] The present invention relates to a MEMS structure and a method for manufacturing the same, and more particularly, to a MEMS structure having a portion that floats on the substrate and a method for manufacturing the same.
    [13] MEMS (Micro electro mechanical system) is a technology for implementing mechanical and electrical components using a semiconductor process. In order for a device fabricated using MEMS technology to operate mechanically, a MEMS device typically has a floating portion on the substrate so as to be swingable.
    [14] 1 is a diagram illustrating an example of such a MEMS structure.
    [15] The MEMS structure has a substrate 110, a fixing portion 131 fixed on the substrate 110, and a floating portion 133 extending from the fixing portion 133. The fixing part 133 is commonly called an anchor or support, and functions to fix the floating part 133 on the substrate 110. The floating part 133 is spaced apart to float on the substrate 110, and thus, the floating part 133 is swingable in the vertical direction as indicated by the dotted line by an external driving force. The floating part 133 is manufactured in a shape such as a beam or a membrane as necessary.
    [16] 2A through 2D are views sequentially showing an example of a manufacturing process of the MEMS structure as described above.
    [17] A sacrificial layer 220 is stacked on the substrate 210, and the sacrificial layer 220 has a shape corresponding to the shape of an anchor fixed on the substrate 210 as shown in FIG. 2A. It is patterned to have. As shown in FIG. 2B, the MEMS structure layer 230 is stacked on the patterned sacrificial layer 220. As the MEMS structure layer 230 is stacked, the floating portion 233 is formed in the portion where the sacrificial layer 220 remains, and the fixing portion 231 and the fixing portion 231 are formed in the portion where the sacrificial layer 220 is removed. And a connecting portion 232 connecting the floating portion 233 is formed.
    [18] Then, etching holes (Etching Access Holes) 240 is formed in the floating portion 233 of the MEMS structure layer 230, as shown in Figure 2c. When an etchant is supplied to the sacrificial layer 220 through the etching hole 240, the sacrificial layer 220 is removed and the floating part 233 is spaced apart from the substrate 210 as shown in FIG. 2D. It becomes
    [19] The method of manufacturing the MEMS structure floating on the substrate 110 by stacking the MEMS structure layer 230 on the patterned sacrificial layer 220 and removing the sacrificial layer 220 is most commonly used to fabricate the MEMS structure. The method used.
    [20] However, the MEMS structure manufactured by the above method may include a fixed portion 231 fixed on the substrate 210 and a floating portion 233 floating on the substrate 210 at portions having different thicknesses of the connection portion 232. Since it is formed relatively thin in comparison, there is a problem that the strength is very weak. Therefore, as the driving of the floating unit 233 is repeated, the connecting unit 232 may be damaged, and as the connection state of the connecting unit 232 is changed, precise control of the operating range of the floating unit 233 may be difficult. have.
    [21] 3A to 3D are views sequentially illustrating another example of the fabrication process of the MEMS structure, and show a process of fabricating the MEMS structure using a silicon on insulator (SOI) wafer or the like.
    [22] As shown in FIG. 3A, a sacrificial layer 320 is stacked on the substrate 310, and a MEM structure layer 330 for forming a MEMS structure is stacked on the sacrificial layer 320. The MEMS structure layer 330 is patterned to correspond to the shape of the MEMS structure to be manufactured. As shown in FIG. 3B, when the MEMS structure layer 330 is patterned, an etching hole 340 is also formed. In this case, an etching hole 340 is formed in a portion corresponding to the floating part 333 of the MEMS structure layer 330. ) Is formed and the etching hole 340 is not formed in the portion corresponding to the fixing part 331.
    [23] Then, when an etchant is supplied to the sacrificial layer 320 through the etching hole 340, the sacrificial layer 320 is removed to leave only the MEMS structure on the substrate 310. At this time, since the etching hole 340 is formed only in a portion corresponding to the floating portion 333, as shown in FIG. 3C, all of the sacrificial layer 320 existing under the floating portion 333 is removed. A portion of the edge of the sacrificial layer 320 existing below the fixing part 331 is removed.
    [24] As described above, the MEMS structure layer 330 is stacked on the sacrificial layer 320, and a portion of the sacrificial layer 320 is removed to fabricate the floating MEMS structure on the substrate 310. The non-functional part serves as an anchor for fixing the MEMS structure on the substrate 310.
    [25] However, according to this method, since the width of the sacrificial layer 320 functioning as an anchor changes according to the time when the sacrificial layer 320 is exposed to the etchant, precisely controlling the length of the floating portion 333. There is a problem that is difficult. That is, when the release time for exposing the sacrificial layer 320 to the etchant is long, as shown in FIG. 3d, the width of the anchor is narrow and when the release time is short, as shown in FIG. The width becomes wider, and thus the length of the floating part 333 is changed. Therefore, this method is not suitable for the fabrication of the MEMS structure in which the size or length of the floating portion 333 must be set precisely.
    [26] In addition, since the sacrificial layer 320 is interposed between the fixing part 331 and the substrate 310, the MEMS structure manufactured by the method described above may be formed of a substrate ( There is a problem that electrical connection with another circuit on 310 is difficult. Therefore, in this case, an additional process for electrically connecting the MEMS structure to other circuits is required.
    [27] The present invention has been made to solve the above problems, an object of the present invention, the fixed portion fixed to the substrate and the floating portion on the substrate is firmly connected to each other, the adjustment of the length of the floating portion is precisely The present invention provides a MEMS structure that can be controlled and also has an easy electrical connection with other circuits, and a method of manufacturing the MEMS structure.
    [1] 1 is a schematic side cross-sectional view of a general MEMS structure;
    [2] 2A to 2D are views sequentially showing an example of a manufacturing process of the MEMS structure;
    [3] 3A to 3D are views sequentially showing another example of the manufacturing process of the MEMS structure;
    [4] Figures 4a to 4f is a view sequentially showing the manufacturing process of the MEMS structure according to the present invention,
    [5] Figures 5a to 5e is a view showing a perspective view showing the process of manufacturing the MEMS structure in accordance with the manufacturing process shown in Figures 4a to 4f, and
    [6] FIG. 6 is a view illustrating the shape of a sacrificial layer in a MEMS structure in FIG. 5E.
    [7] Explanation of symbols on the main parts of the drawings
    [8] 410: substrate 420: sacrificial layer
    [9] 430: MEMS structure layer 431: fixed part
    [10] 432: connecting portion 433: floating part
    [11] 435 side wall 440 etching hole
    [28] The object of the present invention is a method of manufacturing a MEMS structure having a fixed part fixed to a substrate, and a floating part connected to the fixed part and floating on the substrate, wherein the sacrificial layer is laminated on the substrate. Making a step; Patterning the sacrificial layer to form a space surrounding at least a portion of an area corresponding to an area where the fixing part is to be formed; Stacking a MEMS structure layer on the sacrificial layer to form sidewalls in the space and forming the fixing part and the floating part on the sacrificial layer; And removing the sacrificial layer using an etchant. In the removing step, the supply of the etchant is blocked by the side wall to a part of the sacrificial layer corresponding to the fixing part, and the remaining part of the sacrificial layer except for the part surrounded by the side wall is removed.
    [29] According to the present invention, since the connecting portion is made of the same thickness as the fixing portion and the floating portion is provided a MEMS structure having a rigid structure. In addition, since the fixing part and the substrate are connected by the side wall, electrical connection between the MEMS structure and other circuits is facilitated.
    [30] Preferably, in the space forming step, the space is formed over substantially all sections of the remaining portions except for the portion corresponding to the connecting portion connecting the fixing portion and the floating portion, and the connecting portion is formed more than the fixing portion. It is narrow in width. Accordingly, the boundary between the fixed portion and the floating portion can be set clearly, and the adjustment of the length of the floating portion can be precisely controlled. In addition, in the release process of removing the sacrificial layer using an etchant, precise setting of the release time is not required.
    [31] On the other hand, according to the present invention; A fixed part fixed to the substrate; A floating part connected to the fixing part and floating on the substrate; An anchor interposed between the fixing part and the substrate to fix the fixing part on the substrate; And a side wall surrounding at least a portion of a side of the anchor.
    [32] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
    [33] Figures 4a to 4f is a view sequentially showing the manufacturing process of the MEMS structure according to the present invention, Figures 5a to 5e is a perspective view showing the process to be manufactured in the structure according to the manufacturing process shown in Figures 4a to 4f. One drawing.
    [34] As shown in FIGS. 4A and 5A, a sacrificial layer 420 is stacked on a substrate 410 made of a semiconductor material such as silicon. The sacrificial layer 420 may be made of a material such as aluminum (Al), copper (Cu), oxide (Oxide), or nickel (Ni). As shown in FIGS. 4B and 5B, the sacrificial layer 420 is patterned into a predetermined shape. At this time, a groove-shaped space 423 is formed in the sacrificial layer 420 by a portion of the sacrificial layer 420 that is patterned and removed, and the groove-shaped space 423 is formed in the anchor as described below. Corresponds to the edge shape.
    [35] The MEMS structure layer 430 is stacked on the patterned sacrificial layer 420 as shown in FIGS. 4C and 5C. The MEMS structure layer 430 is formed by depositing a material such as gold (Au). In this case, the MEMS structure layer 430 is also stacked in the space 423 formed in the sacrificial layer 420. Accordingly, the MEMS structure layer 430 is fixed to the upper portion of the sacrificial layer 420. As the sacrificial layer 420 is later removed, the floating portion 433 floating on the substrate 410 is formed, and the side wall 435 formed in the space 423 is formed. The MEMS structure layer 430 is formed to have a uniform thickness over the entire range of the sacrificial layer 420, and only the horizontal width of the sidewall 435 is perpendicular to that of the MEMS structure layer 430 on the substrate 410. As it is stacked in the direction, it becomes thinner than other portions in the MEMS structure layer 430.
    [36] 4D and 5D, etching access holes 440 are formed in the MEMS structure layer 430. In this case, the etching hole 440 is formed only in a portion of the MEMS structure layer 430 to be a floating portion 433 such as a beam or a membrane, and is not formed in the portion to be the fixing portion 431. .
    [37] When an etchant capable of selectively etching only the sacrificial layer 420 is supplied through the etching hole 440, a part of the sacrificial layer 420 is etched and removed. 4E and 4F illustrate a state in which the sacrificial layer 420 existing under the floating portion 431 is gradually removed as the sacrificial layer 420 is in contact with the etchant.
    [38] At this time, an etchant is supplied to the sacrificial layer 420 existing below the floating part 433, but an etchant is not supplied to the sacrificial layer 420 existing below the fixing part 431. This is because an etching hole 440 is not formed in the fixing portion 431, and the sacrificial layer 420 existing under the fixing portion 431 is surrounded by the sidewall 435. Therefore, the sacrificial layer 420 under the fixing part 431 is protected by the side wall 435 and is left without being etched. Thus, the sacrificial layer 420 under the fixing part 431 is fixed to the fixing part 431. ) To function as an anchor that firmly rests on the substrate 410.
    [39] As such, the sacrificial layer 420 is patterned in advance so that the sidewalls 435 are formed when the MEMS structure layer 430 is formed, so that the sacrificial layer below the fixing part 431 is not removed during the release process of the sacrificial layer 420. do. Since the size of the anchor is determined by the position of the side wall 435, the length adjustment of the floating portion 433 is precisely controlled. Although the thickness of the sidewall 435 is thinner than other portions of the MEMS structure 430, since the etchant removes only the sacrificial layer 420, the lower portion of the fixing part 431 may be formed by the thin sidewall 435. Sacrificial layer 420 can be sufficiently protected from the etchant.
    [40] Also, as shown in FIGS. 4F and 5E, the MEMS structure formed by the above-described method includes a fixing portion 431, a floating portion 433, and a connecting portion 432 connecting them to the MEMS structure layer 430. It is formed integrally on the same plane during the lamination process. Therefore, the thickness of the connection part 432 is equal to the thickness of the fixing part 431 and the floating part 433, thereby preventing the weakening of the rigidity of the connection part 432.
    [41] In addition, according to the MEMS structure as described above, the side wall 435 formed during the stacking process of the MEMS structure layer 430 is in contact with the substrate 410, so that the substrate 410 and the fixing part 431 are connected to the side wall 435. Are connected by. Thus, the electrical connection between the other circuit formed on the substrate 410 and the MEMS structure is facilitated.
    [42] Meanwhile, in the patterning process of the sacrificial layer 420 as shown in FIGS. 4B and 5B, the space 423 formed by the patterning may have at least a portion of a region corresponding to the region where the fixing portion 431 is to be formed. It is formed to surround. That is, the space 423 is formed over substantially the entire range of the remaining circumference of the fixing portion 431 except for the section in which the connecting portion 432 is to be formed. Accordingly, the side wall 435 is also formed over the entire section except for the section in which the connection part 432 is formed among the peripheral sections of the fixing part 431. Thus, almost all portions of the area of the sacrificial layer 420 to be anchored are effectively shielded by the sidewalls 435 such that they do not contact the etchant.
    [43] FIG. 6 is a view illustrating the shape of a sacrificial layer in the MEMS structure illustrated in FIG. 5E. Since the sidewalls 435 are not formed below the connecting portion 432, the etchant introduced through the lower portion of the connecting portion 432 during the removal process of the sacrificial layer 420 is illustrated in FIGS. 4F and 6. As part of the sacrificial layer 420 may be removed.
    [44] However, even when a portion of the sacrificial layer 420 is removed as described above, the width of the connection portion 432 is formed to be smaller than the width of the fixing portion 431, so that the portion of the sacrificial layer 420 is removed. Only a portion, that is, the area near the connection 432, is removed. Therefore, even though a part of the sacrificial layer 420 under the fixing part 431 is removed, the state in which the fixing part 431 is fixed by the anchor is not substantially changed, so that the length of the floating part 433 is also substantially changed. It doesn't work. Thus, the length of the floating portion 433 can be precisely adjusted to the desired length.
    [45] As described above, according to the present invention, since the connecting portion is manufactured to the same thickness as the fixing portion and the floating portion, there is provided a MEMS structure having a rigid structure. In addition, since the anchor is formed by the sacrificial layer prevented from being etched by the side wall, the boundary between the fixed part and the floating part can be set clearly. Thus, the adjustment of the length of the floating portion can be precisely controlled. In addition, since the fixing part and the substrate are connected by the side wall, electrical connection between the MEMS structure and other circuits is facilitated.
    [46] In addition, according to the present invention, since the portion to be anchored is protected from the etchant by the side wall, precise setting of the release time is not necessary in the release process of removing the sacrificial layer using the etchant. Thus, it is possible to release for a sufficient time necessary to remove all of the sacrificial layer below the floating part, where the width of the connecting part is narrower than the width of the fixing part, so that part of the part of the sacrificial layer to be anchored is removed. If there is no effect on the performance of the MEMS structure.
    [47] Although the preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the specific embodiments described above, and the present invention is not limited to the specific embodiments of the present invention without departing from the spirit of the present invention as claimed in the claims. Anyone skilled in the art can make various modifications, as well as such modifications are within the scope of the claims.
    权利要求:
    Claims (10)
    [1" claim-type="Currently amended] A method of manufacturing a MEMS structure having a fixed part fixed to a substrate, and a floating part connected to the fixed part and floating on the substrate,
    Depositing a sacrificial layer on the substrate;
    Patterning the sacrificial layer to form a space surrounding at least a portion of an area corresponding to an area where the fixing part is to be formed;
    Stacking a MEMS structure layer on the sacrificial layer to form sidewalls in the space and forming the fixing part and the floating part on the sacrificial layer; And
    Removing the sacrificial layer using an etchant;
    In the removing step, the supply of the etchant to the portion of the sacrificial layer corresponding to the fixing portion is blocked by the side wall, so that the remaining portion except for the portion surrounded by the side wall of the sacrificial layer is removed. MEMS structure manufacturing method characterized by.
    [2" claim-type="Currently amended] The method of claim 1,
    In the space forming step, the space is formed MEMS structure, characterized in that formed over the substantially entire section of the remaining portion except for the portion corresponding to the connecting portion connecting the fixed portion and the floating portion.
    [3" claim-type="Currently amended] The method of claim 2,
    The connecting portion of the MEMS structure manufacturing method characterized in that the width is narrower than the fixing portion.
    [4" claim-type="Currently amended] The method of claim 1,
    Before the removing step, the method for producing a MEMS structure, characterized in that further comprising the step of forming an etching hole in the MEMS structure layer.
    [5" claim-type="Currently amended] The method of claim 4, wherein
    MEMS structure manufacturing method characterized in that the etching hole is formed in the floating portion.
    [6" claim-type="Currently amended] Board;
    A fixed part fixed to the substrate;
    A floating part connected to the fixing part and floating on the substrate;
    An anchor interposed between the fixing part and the substrate to fix the fixing part on the substrate; And
    And sidewalls surrounding at least a portion of a side of the anchor.
    [7" claim-type="Currently amended] The method of claim 6,
    The side wall, the MEMS structure, characterized in that formed over the substantially entire section of the remaining portion other than the portion corresponding to the connecting portion connecting the fixing portion and the floating portion.
    [8" claim-type="Currently amended] The method of claim 7, wherein
    Mess structure, characterized in that the connecting portion is narrower than the fixing portion.
    [9" claim-type="Currently amended] The method of claim 6,
    MEMS structure, characterized in that the side wall, the fixing portion and the floating portion is formed integrally.
    [10" claim-type="Currently amended] The method of claim 9,
    And the sidewall is in contact with the substrate.
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    同族专利:
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    CN1274581C|2006-09-13|
    JP2003191199A|2003-07-08|
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    DE60235344D1|2010-04-01|
    EP1325884B1|2010-02-17|
    US6975010B2|2005-12-13|
    CN1440924A|2003-09-10|
    KR100416266B1|2004-01-24|
    EP1325884A2|2003-07-09|
    JP3770871B2|2006-04-26|
    US20030122205A1|2003-07-03|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-12-18|Application filed by 삼성전자주식회사
    2001-12-18|Priority to KR20010080358A
    2003-06-25|Publication of KR20030049992A
    2004-01-24|Application granted
    2004-01-24|Publication of KR100416266B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR20010080358A|KR100416266B1|2001-12-18|2001-12-18|MEMS structure having a blocked-sacrificial layer support/anchor and a fabrication method of the same|
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